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Freescale Semiconductor Technical Data
Document Number: MWIC930N Rev. 6, 5/2006
RF LDMOS Wideband Integrated Power Amplifiers
The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip integral matching circuitry makes it usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application * Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921 - 960 MHz) Power Gain -- 30 dB Power Added Efficiency -- 45% Driver Application * Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band (865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 31 dB Power Added Efficiency -- 21% ACPR @ 750 kHz Offset -- - 52 dBc in 30 kHz Bandwidth * Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VRD2 VRG2 VDS1
MWIC930NR1 MWIC930GNR1
746 - 960 MHz, 30 W, 26 - 28 V SINGLE N - CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MWIC930NR1
CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MWIC930GNR1
GND VRD2 VRG2 VDS1 VRD1 VDS2/RFout RFin VRG1 VGS1 VGS2 NC GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFin VRD1 VRG1
RFout/ VDS2
13 12
NC GND
VGS1 VGS2
Quiescent Current Temperature Compensation
(Top View) Note: Exposed backside flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MWIC930NR1 MWIC930GNR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +65 - 0.5, +15 - 65 to +175 200 Unit Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case GSM Application (Pout = 30 W CW) GSM EDGE Application (Pout = 15 W CW) CDMA Application (Pout = 5 W CW) Stage 1, 26 Vdc, IDQ = 90 mA Stage 2, 26 Vdc, IDQ = 240 mA Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA Symbol RJC 5.9 1.4 6.5 1.7 6.5 1.8 Value (1,2) Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ 750 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Power Added Efficiency Input Return Loss (f = 880 MHz) Adjacent Channel Power Ratio Quiescent Current Accuracy over Temperature (2) Stage 1 with 33.2 k Gate Feed Resistors ( - 30 to 115C) Stage 2 with 47.5 k Gate Feed Resistors ( - 30 to 115C) Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW Delay @ Pout = 5 W CW Including Output Matching Part - to - Part Phase Variation @ Pout = 5 W CW Gps PAE IRL ACPR 28 18 -- -- -- I1QT I2QT GF Delay -- -- -- -- 2.5 2.5 0.3 0.6 3 15 -- -- -- -- dB ns 31 21 - 12 - 52 -- -- -9 - 48 -- dB % dB dBc %
Typical Performances (In Freescale Test Fixture) VDD = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 840 MHz1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. (continued)
MWIC930NR1 MWIC930GNR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C, unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM/GSM EDGE Performances (In Freescale GSM/GSM EDGE Test Fixture, 50 hm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 921 MHzMWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 3
Z8 VD1 C15 RF INPUT C12 C9 1 2 3 4 5 6 7 8 9 NC 13 Quiescent Current 10 NC Temperature Compensation 11 12 Z10 16 NC 15 Z7 Z2 14 C1 C2 Z9 Z3 Z4 Z5 C3 Z6 C5 C6 RF OUTPUT VD2
Z1
VG1 R1 C13 R3 C10 C7
C4
VG2 R2 C14 R4 C11 C8
Z1 Z2 Z3 Z4 Z5
0.0438 x 0.970 50 Microstrip (not including lead pad) 0.234 x 0.1183 Microstrip (including lead pad) 0.1575 x 0.9379 Microstrip 0.08425 x 0.0729 Microstrip 0.08425 x 0.5111 Microstrip
Z6 Z7 Z8 Z9 Z10 PCB
0.0438 x 0.2009 Microstrip 0.5274 x 0.0504 Microstrip 0.0504 x 0.250 Microstrip 0.880 x 0.0254 Microstrip 0.0254 x 0.250 Microstrip Rogers 4350, 0.020, r = 3.50
Figure 3. MWIC930NR1(GNR1) Test Fixture Schematic Table 6. MWIC930NR1(GNR1) Test Fixture Component Designations and Values
Part *C1 *C2 *C3 *C4, C5, C7, C8, C9 C6, C13, C14, C15 C10, C11, C12 R1, R2 R3, R4 Description 15 pF High Q Capacitor 6.8 pF High Q Capacitor - GSM Fixture 8.2 pF High Q Capacitor - CDMA Fixture 5.6 pF High Q Capacitor 47 pF High Q Capacitors 1 F Chip Capacitors 10 nF Chip Capacitors 1 kW, 1/8 W Chip Resistors 1 MW, 1/4 W Chip Resistors Part Number ATC600S150JW ATC600S6R8CW ATC600S8R2CW ATC600S5R6CW ATC600S470JW GRM42 - 2X7R105K050AL C0603C103J5R RM73B2AT102J RM73B2BT105J Manufacturer ATC ATC ATC ATC Murata Kemet KOA Speer KOA Speer
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
MWIC930NR1 MWIC930GNR1 4 RF Device Data Freescale Semiconductor
VD1
C15
MWIC930 Rev 0 VD2
C6
C5
C12 RF Input RF Output
C9 C7 C10 C11 C8 C1 C2
C3
R3 C13
C4 R1 VG1
R4
C14
R2
VG2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. MWIC930NR1(GNR1) Test Circuit Component Layout
MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 5th Order -45 -50 -55 0.1 1 10 100 TONE SPACING (MHz) 7th Order VDD = 27 Vdc Pout = 15 W (Avg.) IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz Two-Tone PEP = 30 W 3rd Order 34 33 G ps , POWER GAIN (dB) 32 31 30 29 28 27 0 VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 5 10 15 20 25 30 35 40 85_C 25_C TC = -30_C
Pout, OUTPUT POWER (WATTS)
Figure 5. Intermodulation Distortion Products versus Output Power
Figure 6. Power Gain versus Output Power
32 30 G ps , POWER GAIN (dB) 28 26 9 dBm 24 12 dBm 22 15 dBm 20 5 10 15 20 25 IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 30 35 6 dBm 3 dBm Pin = 0 dBm G ps , POWER GAIN (dB)
40 38 36 34 32 30 28 26 24 22 20 700 750 800 850 900 VDD = 27 Vdc Pout = 30 W (CW) IDQ1 = 90 mA IDQ2 = 240 mA 950 1000 f, FREQUENCY (MHz) TC = -30_C 25_C 85_C
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 7. Power Gain versus Supply Voltage
Figure 8. Power Gain versus Frequency
-16 IRL, INPUT RETURN LOSS (dB) -18 -20 -22 25_C -24 -30_C -26 -28 0 5 10 15 20 25 30 35 40 Pout, OUTPUT POWER (WATTS) VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
-40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 0 1 2 3 4 5 6 7 8 9 10 Pout, OUTPUT POWER (WATTS) -30_C VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 9-Channel IS-95 CDMA TC = 85_C
TC = 85_C
25_C
Figure 9. Input Return Loss versus Output Power
Figure 10. Adjacent Channel Power Ratio versus Output Power
MWIC930NR1 MWIC930GNR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
55 PAE, POWER ADDED EFFICIENCY (%) 50 45 40 35 30 25 20 15 10 0 5 10 15 20 25 Pout, OUTPUT POWER (WATTS) VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 30 35 40 25_C 85_C PAE, POWER ADDED EFFICIENCY (%) TC = -30_C 58 56 54 52 50 48 46 44 42 40 700 750 800 850 900 f, FREQUENCY (MHz) VDD = 27 Vdc Pout = 30 W (CW) IDQ1 = 90 mA IDQ2 = 240 mA 950 1000 TC = -30_C 25_C 85_C
Figure 11. Power Added Efficiency versus Output Power
Figure 12. Power Added Efficiency versus Frequency
MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 7
Zo = 50
Zload f = 960 MHz f = 740 MHz
1
f = 740 MHz Zin
f = 960 MHz
VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. f MHz 740 760 780 800 820 840 860 880 900 920 940 960 Zin Zload Zin 26.61 - j3.68 26.88 - j0.53 28.22 + j2.21 30.57 + j4.31 33.79 + j5.53 37.83 + j5.30 41.92 + j3.42 45.58 - j0.40 47.77 - j5.84 47.83 - j12.15 45.55 - j18.05 41.58 - j22.64 Zload 4.28 + j2.99 4.37 + j2.91 4.39 + j2.79 4.34 + j2.64 4.21 + j2.54 4.06 + j2.52 3.90 + j2.58 3.73 + j2.70 3.59 + j2.93 3.43 + j3.17 3.28 + j3.44 3.13 + j3.75
= Device input impedance as measured from RF input to ground. = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 13. Series Equivalent Input and Load Impedance MWIC930NR1 MWIC930GNR1 8 RF Device Data Freescale Semiconductor
DRIVER/PRE- DRIVER PERFORMANCE
Z8 VD1 C15 RF INPUT C12 C9 1 2 3 4 5 6 7 8 9 NC 13 Quiescent Current 10 NC Temperature Compensation 11 12 Z10 16 NC 15 Z7 Z2 14 C1 C2 Z9 Z3 Z4 Z5 C3 Z6 C5 C6 RF OUTPUT VD2
Z1
VG1 R1 C13 R3 C10 C7
C4
VG2 R2 C14 R4 C11 C8
Z1 Z2 Z3 Z4 Z5
0.0438 x 0.970 50 Microstrip (not including lead pad) 0.234 x 0.1183 Microstrip (including lead pad) 0.1575 x 0.9379 Microstrip 0.08425 x 0.0729 Microstrip 0.08425 x 0.5111 Microstrip
Z6 Z7 Z8 Z9 Z10 PCB
0.0438 x 0.2009 Microstrip 0.5274 x 0.0504 Microstrip 0.0504 x 0.250 Microstrip 0.880 x 0.0254 Microstrip 0.0254 x 0.250 Microstrip Rogers 4350, 0.020, r = 3.50
Figure 14. MWIC930NR1(GNR1) Test Fixture Schematic -- Alternate Characterization for Driver/Pre - Driver Performance Table 7. MWIC930NR1(GNR1) Test Fixture Component Designations and Values -- Alternate Characterization for Driver/Pre - Driver Performance
Part *C1 *C2 *C3 *C4, C5, C7, C8, C9 C6, C13, C14, C15 C10, C11, C12 R1, R2 R3, R4 Description 12 pF High Q Capacitor 8.2 pF High Q Capacitor - CDMA Fixture 5.6 pF High Q Capacitor 47 pF High Q Capacitors 1 F Chip Capacitors 10 nF Chip Capacitors 1 kW, 1/8 W Chip Resistors 1 MW, 1/4 W Chip Resistors Part Number ATC600S120JW ATC600S8R2CW ATC600S5R6CW ATC600S470JW GRM42 - 2X7R105K050AL C0603C103J5R RM73B2AT102J RM73B2BT105J Manufacturer ATC ATC ATC ATC Murata Kemet KOA Speer KOA Speer
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 9
TYPICAL CHARACTERISTICS DRIVER/PRE- DRIVER PERFORMANCE
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -60
-61 ACPR -62 System Noise Floor -63 VDD = 27 Vdc IDQ1 = 105 mA, IDQ2 = 230 mA f = 880 MHz N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 22 24 26 28 30
-64 -65 20
Pout, OUTPUT POWER (dBm)
Figure 15. Single - Carrier N - CDMA ACPR versus Output Power
MWIC930NR1 MWIC930GNR1 10 RF Device Data Freescale Semiconductor
Zo = 50 f = 740 MHz Zload f = 960 MHz Zin f = 960 MHz f = 740 MHz
VDD = 27 Vdc, IDQ1 = 105 mA, IDQ2 = 230 mA, Pout = 5 W Avg. f MHz 740 760 780 800 820 840 860 880 900 920 940 960 Zin Zload Zin 53.944 + j6.745 54.452 + j7.112 55.006 + j7.440 55.549 + j7.656 55.604 + j7.855 55.190 + j7.835 55.110 + j7.410 55.752 + j4.763 45.606 + j5.832 49.206 + j9.284 49.939 + j9.030 50.088 + j8.752 Zload 2.535 + j1.662 2.602 + j1.080 2.688 + j0.548 2.659 + j0.064 2.615 + j0.329 2.568 + j0.450 2.494 + j0.620 2.444 + j0.650 2.440 + j0.689 2.134 + j0.930 2.155 + j0.835 2.095 + j1.235
= Device input impedance as measured from RF input to ground. = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 16. Series Equivalent Input and Load Impedance -- Alternate Characterization for Driver/Pre - Driver Performance MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 11
NOTES
MWIC930NR1 MWIC930GNR1 12 RF Device Data Freescale Semiconductor
NOTES
MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
MWIC930NR1 MWIC930GNR1 14 RF Device Data Freescale Semiconductor
MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 15
MWIC930NR1 MWIC930GNR1 16 RF Device Data Freescale Semiconductor
MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 17
MWIC930NR1 MWIC930GNR1 18 RF Device Data Freescale Semiconductor
MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 19
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MWIC930NR1 MWIC930GNR1
Rev. 20 6, 5/2006 Document Number: MWIC930N
RF Device Data Freescale Semiconductor

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